PART |
Description |
Maker |
ESLB-P540A-X |
4.9-5.9GHz Band Chip Multilayer Band Pass Filter
|
Hitachi
|
NJG1709KC1 NJG1709KC1-C1 NJG1709KC1-C10 NJG1709KC1 |
1.5/1.9GHz BAND FRONT-END GaAs MMIC
|
NJRC[New Japan Radio]
|
MRFIC1808 |
1.9GHz GaAs Low Noise Amplifier(低噪声.9GHz 砷化镓放大器)
|
Motorola, Inc.
|
STB7101TR STB7101 7518 101 -STB7101TR |
0.9/1.9GHZ BROAD BAND PRE-POWER AMPLIFIER From old datasheet system
|
ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
SZP-5026Z |
4.9GHz to 5.9GHz 2W InGaP AMPLIFIER
|
RFMD
|
SZA5044Z-EVB1 |
4.9GHz to 5.9GHz 5V POWER AMPLIFIER
|
RF Micro Devices
|
ESLB-P245BA-X |
2.4-2.5GHz Band Chip Multilayer Band Pass Filter
|
Hitachi
|
BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG |
NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
NJG1553F-C4 NJG1553F-C7 NJG1553F-L6 NJG1553F-C3 NJ |
1.5GHz/1.9GHz Mixer GaAs MMIC(1.5GHz/1.9GHz砷化镓单片微波集成电路混频器(用于数字移动电话和PHS手机 1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
MAPR-002729-170M00 |
Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100μsec, 170W Radar Pulsed Power Transistor 2.7-2.9GHz, 36V, 100レsec, 170W
|
MACOM[Tyco Electronics]
|
MGA-30316-BLKG |
3.3 -3.9GHz Watt High Linearity Amplifier
|
AVAGO TECHNOLOGIES LIMITED
|
RF5515PCK-410 |
4.9GHz TO 5.85GHZ LOW NOISE AMPLIFIER WITH ENABLE
|
RF Micro Devices
|